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Proceedings Paper

Study of GaAs/AlGaAs and InGaAs/InP quantum well structures using low-field transverse electroreflectance
Author(s): Harri K. Lipsanen; Veli-Matti Airaksinen; Turkka O. Tuomi; P. A. Claxton
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Paper Abstract

We have employed the transverse electroreflectance technique to characterize multiple quantum well structures. A weak modulating electric field (1-100 V/cm) was applied transversally to the probe light beam, i.e., parallel to the quantum well layers. Photoreflectance and in-plane photoconductivity spectra can also be measured with this configuration. The transition energies measured were closely the same as those obtained from the photoreflectance and Schottky barrier electroreflectance spectra. The method can be applied for relatively highly resistive undoped layers grown on semi-insulating substrates. The modulation mechanism in transverse electroreflectance is not well understood.

Paper Details

Date Published: 1 August 1990
PDF: 6 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20858
Show Author Affiliations
Harri K. Lipsanen, Helsinki Univ. of Technology (Finland)
Veli-Matti Airaksinen, Helsinki Univ. of Technology (Finland)
Turkka O. Tuomi, Helsinki Univ. of Technology (Finland)
P. A. Claxton, Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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