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Proceedings Paper

Double-sided diffractive photo-mask for sub-500nm resolution proximity i-line mask-aligner lithography
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Paper Abstract

Diffractive mask-aligner lithography is capable to print structures that have a sub-500-nanometer resolution by using non-contact mode. This requires the use of specially designed phase-masks and dedicated illumination conditions in the Mask-Aligner to obtain the optimal exposure conditions, a spectral filter and a polarizer needs to be placed in the beam path. We introduce here mask designs that includes a polarizer on the top side of a photo-mask and a diffractive element on the bottom one. This enables printing of high resolution structures of arbitrary orientation by using a classical mask-aligner in proximity exposure mode.

Paper Details

Date Published: 18 March 2015
PDF: 9 pages
Proc. SPIE 9426, Optical Microlithography XXVIII, 94260E (18 March 2015); doi: 10.1117/12.2085777
Show Author Affiliations
Yannick Bourgin, Friedrich-Schiller-Univ. Jena (Germany)
Thomas Siefke, Friedrich-Schiller-Univ. Jena (Germany)
Thomas Käsebier, Friedrich-Schiller-Univ. Jena (Germany)
Ernst-Bernhard Kley, Friedrich-Schiller-Univ. Jena (Germany)
Uwe D. Zeitner, Friedrich-Schiller-Univ. Jena (Germany)
Fraunhofer-Institut für Angewandte Optik und Feinmechanik (Germany)


Published in SPIE Proceedings Vol. 9426:
Optical Microlithography XXVIII
Kafai Lai; Andreas Erdmann, Editor(s)

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