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Proceedings Paper

Total fidelity management in self-aligned multiple patterning process
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Paper Abstract

Through the continuous scaling with extension of 193-immersion lithography, the multi-patterning process with the grid-based design has become nominal process for fine fabrication to relax tight pitch designs[1]. In self-aligned type multiple patterning, 7 nm node gate pattern was reported[2],[3] and it was become a focal point LER on core-pattern is essential category to control pattern placement variations. Though CD uniformity (CDU) on line pattern in self-aligned double patterning (SADP) is relatively stable caused in high thickness controllability of spacer deposition films, the variations of CDU and LER on first core pattern impinge the CDU on space and pitch pattern. In previous study, pattern fidelity of single exposure patterning was improved through photoresist smoothing process using direct-current superposition technique[4],[5].

In this paper, we will report that photoresist smoothing work in an efficient way to pattern fidelity control in self-aligned type multiple patterning.

Paper Details

Date Published: 20 March 2015
PDF: 9 pages
Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250D (20 March 2015); doi: 10.1117/12.2085765
Show Author Affiliations
Masatoshi Yamato, Tokyo Electron Ltd. (Japan)
Noriaki Okabe, Tokyo Electron Ltd. (Japan)
Arisa Hara, Tokyo Electron Ltd. (Japan)
Sakurako Natori, Tokyo Electron Ltd. (Japan)
Shouhei Yamauchi, Tokyo Electron Ltd. (Japan)
Kyohei Koike, Tokyo Electron Ltd. (Japan)
Kenichi Oyama, Tokyo Electron Ltd. (Japan)
Hidetami Yaegashi, Tokyo Electron Ltd. (Japan)

Published in SPIE Proceedings Vol. 9425:
Advances in Patterning Materials and Processes XXXII
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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