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Proceedings Paper

Advanced coatings for next generation lithography
Author(s): P. Naujok; Sergiy Yulin; N. Kaiser; A. Tünnermann
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Paper Abstract

Beyond EUV lithography at 6.X nm wavelength has a potential to extend EUVL beyond the 11 nm node. To implement B-based mirrors and to enable their industrial application in lithography tools, a reflectivity level of > 70% has to be reached in near future. The authors will prove that transition from conventional La/B4C to promising LaN/B4C multilayer coatings leads to enhanced optical properties. Currently a near normal-incidence reflectivity of 58.1% @ 6.65 nm is achieved by LaN/B4C multilayer mirrors. The introduction of ultrathin diffusion barriers into the multilayer design to reach the targeted reflectivity of 70% was also tested. The optimization of multilayer design and deposition process for interface-engineered La/C/B4C multilayer mirrors resulted in peak reflectivity of 56.8% at the wavelength of 6.66 nm. In addition, the thermal stability of several selected multilayers was investigated and will be discussed.

Paper Details

Date Published: 13 March 2015
PDF: 7 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221K (13 March 2015); doi: 10.1117/12.2085764
Show Author Affiliations
P. Naujok, Fraunhofer-Institut für Angewandte Optik und Feinmechanik (Germany)
Friedrich-Schiller-Univ. Jena (Germany)
Sergiy Yulin, Fraunhofer-Institut für Angewandte Optik und Feinmechanik (Germany)
N. Kaiser, Fraunhofer-Institut für Angewandte Optik und Feinmechanik (Germany)
A. Tünnermann, Fraunhofer-Institut für Angewandte Optik und Feinmechanik (Germany)


Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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