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Proceedings Paper

Effects of the statistical fluctuation of PAG and quencher on LWR of ArF resists
Author(s): Mitsuhiro Fujita; Michihiro Shirakawa; Shuhei Yamaguchi
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Paper Abstract

In order to improve line width roughness (LWR) of chemically amplified resists (CARs) without trade-offs with other lithographic performances such as exposure latitude (EL) and sensitivity, we investigated effects of the spatial fluctuation of sensitivity on LWR of ArF resists. Compared a statistical model with experiments, it was clarified that LWR of ArF resists was caused by the fluctuation of sensitivity due to the fluctuation of the PAG and quencher concentration. Furthermore, we developed novel photoactive materials such as a transparent PAG and an nPAG-1Amine which were predicted to be useful for reducing the statistical fluctuation of sensitivity by the theoretical model. LWR was successfully improved using these photoactive materials. This study not only provided new insight into the root cause of LWR, but also proved efficacy of the theory-based material design.

Paper Details

Date Published: 20 March 2015
PDF: 10 pages
Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250F (20 March 2015); doi: 10.1117/12.2085751
Show Author Affiliations
Mitsuhiro Fujita, FUJIFILM Corp. (Japan)
Michihiro Shirakawa, FUJIFILM Corp. (Japan)
Shuhei Yamaguchi, FUJIFILM Corp. (Japan)

Published in SPIE Proceedings Vol. 9425:
Advances in Patterning Materials and Processes XXXII
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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