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Proceedings Paper

Standard cell design in N7: EUV vs. immersion
Author(s): Bharani Chava; David Rio; Yasser Sherazi; Darko Trivkovic; Werner Gillijns; Peter Debacker; Praveen Raghavan; Ahmad Elsaid; Mircea Dusa; Abdelkarim Mercha; Julien Ryckaert; Diederik Verkest
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Paper Abstract

While waiting for EUV lithography to become ready for adoption, we need to create designs compatible with both EUV single exposures as well as with 193i multiple splits strategy for technology nodes 7nm and below needed to keep the scaling trend intact. However, the standard approach of designing standard cells in two-dimensional directions is no more valid owing to insufficient resolution of 193-i scanner. Therefore, we propose a standard cell design methodology, which exploits purely one-dimensional interconnect.

Paper Details

Date Published: 18 March 2015
PDF: 9 pages
Proc. SPIE 9427, Design-Process-Technology Co-optimization for Manufacturability IX, 94270E (18 March 2015); doi: 10.1117/12.2085739
Show Author Affiliations
Bharani Chava, IMEC (Belgium)
David Rio, ASML US, Inc. (Belgium)
Yasser Sherazi, IMEC (Belgium)
Darko Trivkovic, IMEC (Belgium)
Werner Gillijns, IMEC (Belgium)
Peter Debacker, IMEC (Belgium)
Praveen Raghavan, IMEC (Belgium)
Ahmad Elsaid, ASML US, Inc. (Belgium)
Mircea Dusa, ASML US, Inc. (United States)
Abdelkarim Mercha, IMEC (Belgium)
Julien Ryckaert, IMEC (Belgium)
Diederik Verkest, IMEC (Belgium)


Published in SPIE Proceedings Vol. 9427:
Design-Process-Technology Co-optimization for Manufacturability IX
John L. Sturtevant; Luigi Capodieci, Editor(s)

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