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Proceedings Paper

Hot spots prediction after etching process based on defect rate
Author(s): Taiki Kimura; Yuki Watanabe; Toshiya Kotani
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Paper Abstract

A resist cross-sectional profile becomes worse as feature sizes shrink. The bad resist profile could result in a hotspot after etching process (after-etch hotspot). Conventional simulation method is difficult to detect such hotspots accurately because it does not consider process variation. In this paper, we propose an accurate after-etch hotspot detection methodology with consideration of process variation based on optical intensity and defect rate. An experimental result shows our method can detect an after-etch hotspot accurately.

Paper Details

Date Published: 26 March 2015
PDF: 6 pages
Proc. SPIE 9426, Optical Microlithography XXVIII, 942610 (26 March 2015); doi: 10.1117/12.2085726
Show Author Affiliations
Taiki Kimura, Toshiba Corp. (Japan)
Yuki Watanabe, Toshiba Corp. (Japan)
Toshiya Kotani, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 9426:
Optical Microlithography XXVIII
Kafai Lai; Andreas Erdmann, Editor(s)

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