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Proceedings Paper

RIE challenges for sub-15 nm line-and-space patterning using directed self-assembly lithography with coordinated line epitaxy (COOL) process
Author(s): Y. Kasahara; Y. Seino; K. Kobayashi; H. Kanai; H. Sato; H. Kubota; T. Tobana; S. Minegishi; K. Miyagi; N. Kihara; K. Kodera; M. Shiraishi; Y. Kawamonzen; S. Nomura; T. Azuma
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Paper Abstract

Directed self-assembly (DSA) is one of the promising candidates for next-generation lithography. We developed a novel simple sub-15 nm line-and-space (L/S) patterning process, the “coordinated line epitaxy (COOL) process,” using grapho- and chemo-hybrid epitaxy. In this study we evaluate the DSA L/S pattern transfer margin. Since defect reduction is difficult in the case of the DSA pattern transfer process, there is a need to increase the pattern transfer margin. We also describe process integration for electrical yield verification.

Paper Details

Date Published: 17 March 2015
PDF: 7 pages
Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 94280S (17 March 2015); doi: 10.1117/12.2085704
Show Author Affiliations
Y. Kasahara, EUVL Infrastructure Development Ctr., Inc. (Japan)
Y. Seino, EUVL Infrastructure Development Ctr., Inc. (Japan)
K. Kobayashi, EUVL Infrastructure Development Ctr., Inc. (Japan)
H. Kanai, EUVL Infrastructure Development Ctr., Inc. (Japan)
H. Sato, EUVL Infrastructure Development Ctr., Inc. (Japan)
H. Kubota, EUVL Infrastructure Development Ctr., Inc. (Japan)
T. Tobana, EUVL Infrastructure Development Ctr., Inc. (Japan)
S. Minegishi, EUVL Infrastructure Development Ctr., Inc. (Japan)
K. Miyagi, EUVL Infrastructure Development Ctr., Inc. (Japan)
N. Kihara, EUVL Infrastructure Development Ctr., Inc. (Japan)
K. Kodera, EUVL Infrastructure Development Ctr., Inc. (Japan)
M. Shiraishi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Y. Kawamonzen, EUVL Infrastructure Development Ctr., Inc. (Japan)
S. Nomura, EUVL Infrastructure Development Ctr., Inc. (Japan)
T. Azuma, EUVL Infrastructure Development Ctr., Inc. (Japan)


Published in SPIE Proceedings Vol. 9428:
Advanced Etch Technology for Nanopatterning IV
Qinghuang Lin; Sebastian U. Engelmann; Ying Zhang, Editor(s)

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