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Proceedings Paper

9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source
Author(s): Renjie Zhou; Chris Edwards; Casey A. Bryniarski; Gabriel Popescu; Lynford L. Goddard
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Paper Abstract

We recently built a 405nm laser based optical interferometry system for 9nm node patterned wafer defect inspection. Defects with volumes smaller than 15nm by 90nm by 35nm have been detected. The success of defect detection relied on accurate mechanical scanning of the wafer and custom engineered image denoising post-processing. To further improve the detection sensitivity, we designed a higher precision XYZ scanning stage and replaced the laser source with an incoherent LED to remove the speckle noise. With these system modifications, we successfully detected both defects and surface contamination particles in bright-field imaging mode. Recently, we have upgraded this system for interferometric defect inspection.

Paper Details

Date Published: 19 March 2015
PDF: 7 pages
Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 942416 (19 March 2015); doi: 10.1117/12.2085683
Show Author Affiliations
Renjie Zhou, Univ. of Illinois at Urbana-Champaign (United States)
Massachusetts Institute of Technology (United States)
Chris Edwards, Univ. of Illinois at Urbana-Champaign (United States)
Casey A. Bryniarski, Univ. of Illinois at Urbana-Champaign (United States)
Gabriel Popescu, Univ. of Illinois at Urbana-Champaign (United States)
Lynford L. Goddard, Univ. of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 9424:
Metrology, Inspection, and Process Control for Microlithography XXIX
Jason P. Cain; Martha I. Sanchez, Editor(s)

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