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Proceedings Paper

Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography
Author(s): Andreas Frommhold; Alexandra McClelland; Dongxu Yang; Richard E. Palmer; John Roth; Yasin Ekinci; Mark C. Rosamund; Alex P. G. Robinson
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Paper Abstract

We have synthesized a new resist molecule and investigated its high-resolution capability. The material showed resolved line-spaces with 14 nm half-pitch (hp) and the potential to pattern 11 nm hp features. Line edge roughness values as low as 3.15 nm were seen in optimized formulations. The dose-to-size is estimated at around 20-30 mJ/cm2. The role of the molecule in the patterning process was studied by comparing it with structurally similar compounds. Furthermore we present first results from exposures of our materials at the Berkeley Micro Exposure Tool. Finally it is also demonstrated that the material works as a resist in 100 kV electron beam lithography as well.

Paper Details

Date Published: 20 March 2015
PDF: 8 pages
Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 942504 (20 March 2015); doi: 10.1117/12.2085672
Show Author Affiliations
Andreas Frommhold, The Univ. of Birmingham (United Kingdom)
Alexandra McClelland, Irresistible Materials Ltd. (United Kingdom)
Dongxu Yang, The Univ. of Birmingham (United Kingdom)
Richard E. Palmer, The Univ. of Birmingham (United Kingdom)
John Roth, Nano-C, Inc. (United States)
Yasin Ekinci, Paul Scherrer Institute (Switzerland)
Mark C. Rosamund, Univ. of Leeds (United Kingdom)
Alex P. G. Robinson, The Univ. of Birmingham (United Kingdom)

Published in SPIE Proceedings Vol. 9425:
Advances in Patterning Materials and Processes XXXII
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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