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Proceedings Paper

EUV mask particle adders during scanner exposure
Author(s): Yoonsuk Hyun; Jinsoo Kim; Kyuyoung Kim; Sunyoung Koo; SeoMin Kim; Youngsik Kim; Changmoon Lim; Nohjung Kwak
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Paper Abstract

As EUV reaches high volume manufacturing, scanner source power and reticle defectivity attract a lot of attention. Keeping a EUV mask clean after mask production is as essential as producing a clean EUV mask. Even though EUV pellicle is actively investigated, we might expose EUV masks without EUV pellicle for some time. To keep clean EUV mask under pellicle-less lithography, EUV scanner cleanliness needs to meet the requirement of high volume manufacturing. In this paper, we will show the cleanliness of EUV scanners in view of mask particle adders during scanner exposure. From this we will find several tendencies of mask particle adders depending on mask environment in scanner. Further we can categorize mask particle adders, which could show the possible causes of particle adders during exposure in scanners.

Paper Details

Date Published: 6 April 2015
PDF: 7 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221U (6 April 2015); doi: 10.1117/12.2085626
Show Author Affiliations
Yoonsuk Hyun, SK Hynix Semiconductor, Inc. (Korea, Republic of)
Jinsoo Kim, SK Hynix Semiconductor, Inc. (Korea, Republic of)
Kyuyoung Kim, SK Hynix Semiconductor, Inc. (Korea, Republic of)
Sunyoung Koo, SK Hynix Semiconductor, Inc. (Korea, Republic of)
SeoMin Kim, SK Hynix Semiconductor, Inc. (Korea, Republic of)
Youngsik Kim, SK Hynix Semiconductor, Inc. (Korea, Republic of)
Changmoon Lim, SK Hynix Semiconductor, Inc. (Korea, Republic of)
Nohjung Kwak, SK Hynix Semiconductor, Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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