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Proceedings Paper

Effects of temperature and difference-wavelength on mode stability in dual-λ QD lasers
Author(s): Samuel Shutts; Peter M. Smowton; Andrey B. Krysa
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Paper Abstract

We employ a device which exploits the properties of InP quantum dots (QD), (emitting from 650-730 nm), to produce simultaneous dual-λ lasing from a single ridge-waveguide comprising two sections. Due to the effects of state-filling in an inhomogeneously broadened QD ensemble, the wavelength is strongly dependent on magnitude of the gain (or cavity loss). Therefore, by altering the loss of each section of the device we are able to demonstrate a large range of difference-wavelengths, up to 63 nm. Here, we test the performance of the device and measure effects of temperature and difference-wavelength on the stability of the two lasing modes.

Paper Details

Date Published: 10 March 2015
PDF: 8 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820J (10 March 2015); doi: 10.1117/12.2085511
Show Author Affiliations
Samuel Shutts, Cardiff Univ. (United Kingdom)
Peter M. Smowton, Cardiff Univ. (United Kingdom)
Andrey B. Krysa, The Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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