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Proceedings Paper

Experimental validation of stochastic modeling for negative-tone develop EUV resists
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Paper Abstract

Line width roughness (LWR) remains a critical issue when moving towards smaller feature sizes in EUV lithography. At the same time, negative-tone develop (NTD) resist has become a promising process to get wide process margin at narrow trenches and for block mask layers in optical lithography. Here, we present a study on printing behavior of an EUV NTD resist which was exposed at IMEC on the AMSL NXE:3100 EUV tool. In particular, we analyzed the line width roughness, which was found to be pattern dependent. We calibrated a stochastic resist model to the experimental CD and LWR data. The resulting model was used to analyze and understand the pattern dependent LWR behavior. Simulation results for different LWR process window between iso trench, dense line and iso line was verified with measurement results.

Paper Details

Date Published: 19 March 2015
PDF: 15 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942223 (19 March 2015); doi: 10.1117/12.2085506
Show Author Affiliations
Itaru Kamohara, Synopsys GmbH (Germany)
Weimin Gao, Synopsys GmbH (Belgium)
IMEC (Belgium)
Ulrich Klostermann, Synopsys GmbH (Germany)
Thomas Schmöller, Synopsys GmbH (Germany)
Wolfgang Demmerle, Synopsys GmbH (Germany)
Kevin Lucas, Synopsys GmbH (United States)
Danilo De Simone, IMEC (Belgium)
Eric Hendrickx, IMEC (Belgium)
Geert Vandenberghe, IMEC (Belgium)


Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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