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Proceedings Paper

Comparison between e-beam direct write and immersion lithography for 20nm node
Author(s): Pieter Brandt; Charu Sardana; Dale Ibbotson; Marco Wieland; Aurélien Fay
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Paper Abstract

E-beam Direct Write (EBDW) process window simulations were performed on critical layers in Altera designs of the 20 nm node (minimum metal half-pitch 32 nm). For selected layout clips, a direct comparison is made with 193i simulation results. Local Interconnect and Via0 (single patterning) and Metal1 (Litho-Etch-Litho-Etch (LELE) double patterning) layers are considered. The EBDW dose latitude was found to exceed that of the 193i process by a factor 4. As the electron beam total spot size is of the order of the Critical Dimension (CD) for the considered node, interplay between neighboring features is low. This results in straightforward data preparation with typically 2 kernels and ‘clean’ process windows. The latter are mainly limited by Edge Placement Errors of Line Ends. The curves for the various simulation sites roughly overlap, as opposed to the 193i case in which they differ significantly. In EBDW the performance of square vias equals that of rectangular vias, enabling a denser via packing.

Paper Details

Date Published: 19 March 2015
PDF: 8 pages
Proc. SPIE 9423, Alternative Lithographic Technologies VII, 942311 (19 March 2015); doi: 10.1117/12.2085500
Show Author Affiliations
Pieter Brandt, MAPPER Lithography (Netherlands)
Charu Sardana, Altera Corp. (United States)
Dale Ibbotson, Altera Corp. (United States)
Marco Wieland, MAPPER Lithography (Netherlands)
Aurélien Fay, CEA-Leti (France)

Published in SPIE Proceedings Vol. 9423:
Alternative Lithographic Technologies VII
Douglas J. Resnick; Christopher Bencher, Editor(s)

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