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Proceedings Paper

Demonstration of parallel scanning probe microscope for high throughput metrology and inspection
Author(s): Hamed Sadeghian; Bert Dekker; Rodolf Herfst; Jasper Winters; Alexander Eigenraam; Ramon Rijnbeek; Nicole Nulkes
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Paper Abstract

With the device dimensions moving towards the 1X node and below, the semiconductor industry is rapidly approaching the point where existing metrology, inspection and review tools face huge challenges in terms of resolution, the ability to resolve 3D and the throughput. Due to the advantages of sub-nanometer resolution and the ability of true 3D scanning, scanning probe microscope (SPM) and specifically atomic force microscope (AFM) are considered as alternative technologies for CD-metrology, defect inspection and review of 1X node and below.

In order to meet the increasing demand for resolution and throughput of CD-metrology, defect inspection and review, TNO has previously introduced the parallel SPM concept, consisting of parallel operation of many miniaturized SPMs on a 300 and 450 mm wafer. In this paper we will present the proof of principle of the parallelization for metrology and inspection. To give an indication of the system’s specifications, the throughput of scanning is 4500 sites per hour, each within an area of 1 μm2 and 1024 ×1024 pixels.

Paper Details

Date Published: 19 March 2015
PDF: 14 pages
Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94240O (19 March 2015); doi: 10.1117/12.2085495
Show Author Affiliations
Hamed Sadeghian, TNO Delft (Netherlands)
Delft Univ. of Technology (Netherlands)
Bert Dekker, TNO Delft (Netherlands)
Rodolf Herfst, TNO Delft (Netherlands)
Jasper Winters, TNO Delft (Netherlands)
Alexander Eigenraam, TNO Delft (Netherlands)
Ramon Rijnbeek, TNO Delft (Netherlands)
Nicole Nulkes, TNO Delft (Netherlands)


Published in SPIE Proceedings Vol. 9424:
Metrology, Inspection, and Process Control for Microlithography XXIX
Jason P. Cain; Martha I. Sanchez, Editor(s)

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