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Proceedings Paper

Application of the transport of intensity equation to EUV multilayer defect analysis
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Paper Abstract

This paper proposes a new method for the characterization of multilayer defects of EUV masks. The method uses measured or simulated EUV projection images at different focus positions. The Transport of Intensity Equation (TIE) is applied to retrieve the phase distribution of the reflected light in the vicinity of the defect. An Artificial Neural Network (ANN) is applied to correlate the optical properties of the intensity and recovered phase of the defect with the defect geometry parameters and to reconstruct the defect geometry parameters from though-focus-images of unknown defects.

Paper Details

Date Published: 16 March 2015
PDF: 13 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942218 (16 March 2015); doi: 10.1117/12.2085468
Show Author Affiliations
Dongbo Xu, Friedrich-Alexander-Univ. Erlangen-Nürnberg (Germany)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (Germany)
Peter Evanschitzky, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)
Andreas Erdmann, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)


Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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