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Proceedings Paper

Layout optimization with assist features placement by model based rule tables for 2x node random contact
Author(s): Jinhyuck Jun; Minwoo Park; Chanha Park; Hyunjo Yang; Donggyu Yim; Munhoe Do; Dongchan Lee; Taehoon Kim; Junghoe Choi; Gerard Luk-Pat; Alex Miloslavsky
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Paper Abstract

As the industry pushes to ever more complex illumination schemes to increase resolution for next generation memory and logic circuits, sub-resolution assist feature (SRAF) placement requirements become increasingly severe. Therefore device manufacturers are evaluating improvements in SRAF placement algorithms which do not sacrifice main feature (MF) patterning capability. There are known-well several methods to generate SRAF such as Rule based Assist Features (RBAF), Model Based Assist Features (MBAF) and Hybrid Assisted Features combining features of the different algorithms using both RBAF and MBAF. Rule Based Assist Features (RBAF) continue to be deployed, even with the availability of Model Based Assist Features (MBAF) and Inverse Lithography Technology (ILT). Certainly for the 3x nm node, and even at the 2x nm nodes and lower, RBAF is used because it demands less run time and provides better consistency. Since RBAF is needed now and in the future, what is also needed is a faster method to create the AF rule tables. The current method typically involves making masks and printing wafers that contain several experiments, varying the main feature configurations, AF configurations, dose conditions, and defocus conditions – this is a time consuming and expensive process. In addition, as the technology node shrinks, wafer process changes and source shape redesigns occur more frequently, escalating the cost of rule table creation. Furthermore, as the demand on process margin escalates, there is a greater need for multiple rule tables: each tailored to a specific set of main-feature configurations. Model Assisted Rule Tables(MART) creates a set of test patterns, and evaluates the simulated CD at nominal conditions, defocused conditions and off-dose conditions. It also uses lithographic simulation to evaluate the likelihood of AF printing. It then analyzes the simulation data to automatically create AF rule tables. It means that analysis results display the cost of different AF configurations as the space grows between a pair of main features. In summary, model based rule tables method is able to make it much easier to create rule tables, leading to faster rule-table creation and a lower barrier to the creation of more rule tables.

Paper Details

Date Published: 18 March 2015
PDF: 10 pages
Proc. SPIE 9427, Design-Process-Technology Co-optimization for Manufacturability IX, 94270D (18 March 2015); doi: 10.1117/12.2085460
Show Author Affiliations
Jinhyuck Jun, SK Hynix Semiconductor, Inc. (Korea, Republic of)
Minwoo Park, SK Hynix Semiconductor, Inc. (Korea, Republic of)
Chanha Park, SK Hynix Semiconductor, Inc. (Korea, Republic of)
Hyunjo Yang, SK Hynix Semiconductor, Inc. (Korea, Republic of)
Donggyu Yim, SK Hynix Semiconductor, Inc. (Korea, Republic of)
Munhoe Do, Synopsys Korea Inc. (Korea, Republic of)
Dongchan Lee, Synopsys Korea Inc. (Korea, Republic of)
Taehoon Kim, Synopsys Korea Inc. (Korea, Republic of)
Junghoe Choi, Synopsys Korea Inc. (Korea, Republic of)
Gerard Luk-Pat, Synopsys Korea Inc. (Korea, Republic of)
Alex Miloslavsky, Synopsys Korea Inc. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9427:
Design-Process-Technology Co-optimization for Manufacturability IX
John L. Sturtevant; Luigi Capodieci, Editor(s)

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