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Proceedings Paper

Model-based HSF using by target point control function
Author(s): Seongjin Kim; Munhoe Do; Yongbae An; Jaeseung Choi; Hyunjo Yang; Donggyu Yim
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Paper Abstract

As the technology node shrinks, ArF Immersion reaches the limitation of wafer patterning, furthermore weak point during the mask processing is generated easily. In order to make strong patterning result, the design house conducts lithography rule checking (LRC). Despite LRC processing, we found the weak point at the verification stage of optical proximity correction (OPC). It is called the hot spot point (HSP). In order to fix the HSP, many studies have been performed. One of the most general hot spot fixing (HSF) methods is that the modification bias which consists of “Line-Resizing” and “Space-Resizing”. In addition to the general rule biasing method, resolution enhancement techniques (RET) which includes the inverse lithography technology (ILT) and model based assist feature (MBAF) have been adapted to remove the hot spot and to maximize the process window. If HSP is found during OPC verification stage, various HSF methods can be applied. However, HSF process added on regular OPC procedure makes OPC turn-around time (TAT) increased.

In this paper, we introduce a new HSF method that is able to make OPC TAT shorter than the common HSF method. The new HSF method consists of two concepts. The first one is that OPC target point is controlled to fix HSP. Here, the target point should be moved to optimum position at where the edge placement error (EPE) can be 0 at critical points. Many parameters such as a model accuracy or an OPC recipe become the cause of larger EPE. The second one includes controlling of model offset error through target point adjustment. Figure 1 shows the case EPE is not 0. It means that the simulation contour was not targeted well after OPC process. On the other hand, Figure 2 shows the target point is moved -2.5nm by using target point control function. As a result, simulation contour is matched to the original layout. This function can be powerfully adapted to OPC procedure of memory and logic devices.

Paper Details

Date Published: 18 March 2015
PDF: 7 pages
Proc. SPIE 9426, Optical Microlithography XXVIII, 94261X (18 March 2015); doi: 10.1117/12.2085453
Show Author Affiliations
Seongjin Kim, SK Hynix, Inc. (Korea, Republic of)
Munhoe Do, Synopsys Inc. (Korea, Republic of)
Yongbae An, SK Hynix, Inc. (Korea, Republic of)
Jaeseung Choi, SK Hynix, Inc. (Korea, Republic of)
Hyunjo Yang, SK Hynix, Inc. (Korea, Republic of)
Donggyu Yim, SK Hynix, Inc. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9426:
Optical Microlithography XXVIII
Kafai Lai; Andreas Erdmann, Editor(s)

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