Share Email Print

Proceedings Paper

Terahertz electronics for sensing and imaging applications
Author(s): Michael Shur
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Short channel field effect transistors can detect terahertz radiation. Such detection is enabled by the excitation of the plasma waves rectified due to the device nonlinearities. The resulting response has nanometer scale spatial resolution and can be modulated in the sub THz range. This technology could enable a variety of sensing, imaging, and wireless communication applications, including detection of biological and chemical hazardous agents, cancer detection, shortrange covert communications (in THz and sub-THz windows), and applications in radio astronomy. Field effect transistors implemented using III-V, III-N, Si, SiGe, and graphene have been used to detect THz radiation. Using silicon transistors in plasmonic regimes is especially appealing because of compatibility with standard readout silicon VLSI components.

Paper Details

Date Published: 22 May 2015
PDF: 8 pages
Proc. SPIE 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII, 94672A (22 May 2015); doi: 10.1117/12.2085442
Show Author Affiliations
Michael Shur, ECSE and PAPA, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 9467:
Micro- and Nanotechnology Sensors, Systems, and Applications VII
Thomas George; Achyut K. Dutta; M. Saif Islam, Editor(s)

© SPIE. Terms of Use
Back to Top