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Proceedings Paper

Temperature dependence of the energy gap of (GaAs)n/(AlAs)n superlattices
Author(s): Takeshi Nakazawa; Toshimasa Matsuoka; Tomoki Ohya; Kenji Taniguchi; Chihiro Hamaguchi; Hiromu Kato; Yasutaka Watanabe
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Paper Abstract

Photoreflectance and photoluminescence experiments are carrIed out in (GaAs)/(AlAs) (n = 1-15) in the temperature range from 25 to 275 K. Weak signals of photoreflectance associated with the critical point of the pseudodirect transition, weakly allowed direct transition arising from the zone-folding effect, have been found as well as main signals associated with the direct allowed transitions. This assignment is supported by the temperature dependence of the photoluminescence intensity, which gives the transition probability ratio of the direct allowed to pseudodirect transition about 102. Temperature dependence of the critical point energies and luminescence peak energies shows a similar behavior to bulk semiconductors. These observations show also that the monolayer number n for which the crossover of direct and pseudodirect transitions occurs depends on temperature. In addition the broadening parameters determined from photoreflectance spectra are found to be almost independent of temperature and depend on the monolayer number n, which may be explained in terms of broadening induced by the layer number fluctuation.

Paper Details

Date Published: 1 August 1990
PDF: 11 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20852
Show Author Affiliations
Takeshi Nakazawa, Osaka Univ. (United States)
Toshimasa Matsuoka, Osaka Univ. (Japan)
Tomoki Ohya, Osaka Univ. (Japan)
Kenji Taniguchi, Osaka Univ. (Japan)
Chihiro Hamaguchi, Osaka Univ. (Japan)
Hiromu Kato, Kwansei Gakuin Univ. (Japan)
Yasutaka Watanabe, Kwansei Gakuin Univ. (Japan)


Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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