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Proceedings Paper

Photoreflectance studies of InGaAs/InP superlattices
Author(s): Veli-Matti Airaksinen; Harri K. Lipsanen; P. Ravila; Turkka O. Tuomi; P. A. Claxton
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Paper Abstract

Photoreflectance measurements of InGaAs/InP superlattices grown by solid source molecular beam epitaxy show a well resolved ground state exciton and some of the higher confined transitions in the quantum wells. Ground state splitting possibly due to one monolayer variations in the layer thicknesses is observed. Strong unconfined transitions below the InP band gap are due to arsenic doping of the barriers caused by small amounts of arsenic leakage from the evaporation sources during the epitaxy.

Paper Details

Date Published: 1 August 1990
PDF: 6 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20851
Show Author Affiliations
Veli-Matti Airaksinen, Helsinki Univ. of Technology (Finland)
Harri K. Lipsanen, Helsinki Univ. of Technology (Finland)
P. Ravila, Helsinki Univ. of Technology (Finland)
Turkka O. Tuomi, Helsinki Univ. of Technology (Finland)
P. A. Claxton, Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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