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Proceedings Paper

Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks
Author(s): Obert Wood; Sudharshanan Raghunathan; Pawitter Mangat; Vicky Philipsen; Vu Luong; Patrick Kearney; Erik Verduijn; Aditya Kumar; Suraj Patil; Christian Laubis; Victor Soltwisch; Frank Scholze
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Paper Abstract

In this paper we compare the imaging performance of several options currently under consideration for use in 0.33 and higher numerical aperture (NA) extreme ultraviolet (EUV) mask stacks, Mo/Si ML reflective coatings with 40 bilayers, Ru/Si multilayer (ML) reflective coatings with 20 bilayers, and a new thinner Ni-based absorber layer on each of these mask stacks. The use of a Ru/Si ML coating with its shallower effective reflectance plane and a 2x thinner Ni-based absorber is expected to significantly reduce both shadow bias requirements and mask telecentricity errors. The conclusions of the paper are supported with the results of both experimental measurements and rigorous simulations.

Paper Details

Date Published: 16 March 2015
PDF: 12 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94220I (16 March 2015); doi: 10.1117/12.2085022
Show Author Affiliations
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
Sudharshanan Raghunathan, GLOBALFOUNDRIES Inc. (United States)
Pawitter Mangat, GLOBALFOUNDRIES Inc. (United States)
Vicky Philipsen, IMEC (Belgium)
Vu Luong, IMEC (Belgium)
KU Leuven (Belgium)
Patrick Kearney, SEMATECH Inc. (United States)
Erik Verduijn, GLOBALFOUNDRIES Inc. (Belgium)
Aditya Kumar, GLOBALFOUNDRIES Inc. (United States)
Suraj Patil, GLOBALFOUNDRIES Inc. (United States)
Christian Laubis, Physikalisch-Technische Bundesanstalt (Germany)
Victor Soltwisch, Physikalisch-Technische Bundesanstalt (Germany)
Frank Scholze, Physikalisch-Technische Bundesanstalt (Germany)

Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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