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Proceedings Paper

Modulated reflection and absorption spectroscopies of strained InGaAs/GaAs multiple quantum wells
Author(s): Shuechu Shen; W. Shan; X. M. Fang; Z. Hang; Fred H. Pollak
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Paper Abstract

The dependence of intersubband transitions on temperature and pressure in strained InGa1As/GaAs multiple quantum wells with different x and well widths has been investigated by use of the modulated reflection and absorption spectroscopies. The identifications for dislocation free at the interface will be discussed.

Paper Details

Date Published: 1 August 1990
PDF: 17 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20850
Show Author Affiliations
Shuechu Shen, National Lab. for Infrared Phy (China)
W. Shan, National Lab. for Infrared Phy (China)
X. M. Fang, National Lab. for Infrared Phy (China)
Z. Hang, Brooklyn College/CUNY (United States)
Fred H. Pollak, Brooklyn College/CUNY (United States)


Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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