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Proceedings Paper

The analysis method of the DRAM cell pattern hotspot
Author(s): Kyusun Lee; Kweonjae Lee; Jinman Chang; Taeheon Kim; Daehan Han; Aeran Hong; Yonghyeon Kim; Jinyoung Kang; Bumjin Choi; Joosung Lee; Jooyoung Lee; Hyeongsun Hong; Kyupil Lee; Gyoyoung Jin
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Paper Abstract

It is increasingly difficult to determine degree of completion of the patterning and the distribution at the DRAM Cell Patterns. When we research DRAM Device Cell Pattern, there are three big problems currently, it is as follows. First, due to etch loading, it is difficult to predict the potential defect. Second, due to under layer topology, it is impossible to demonstrate the influence of the hotspot. Finally, it is extremely difficult to predict final ACI pattern by the photo simulation, because current patterning process is double patterning technology which means photo pattern is completely different from final etch pattern. Therefore, if the hotspot occurs in wafer, it is very difficult to find it.

CD-SEM is the most common pattern measurement tool in semiconductor fabrication site. CD-SEM is used to accurately measure small region of wafer pattern primarily. Therefore, there is no possibility of finding places where unpredictable defect occurs. Even though, "Current Defect detector" can measure a wide area, every chip has same pattern issue, the detector cannot detect critical hotspots. Because defect detecting algorithm of bright field machine is based on image processing, if same problems occur on compared and comparing chip, the machine cannot identify it. Moreover this instrument is not distinguished the difference of distribution about 1nm~3nm. So, "Defect detector" is difficult to handle the data for potential weak point far lower than target CD.

In order to solve those problems, another method is needed. In this paper, we introduce the analysis method of the DRAM Cell Pattern Hotspot.

Paper Details

Date Published: 19 March 2015
PDF: 7 pages
Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94241D (19 March 2015); doi: 10.1117/12.2084992
Show Author Affiliations
Kyusun Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Kweonjae Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jinman Chang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Taeheon Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Daehan Han, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Aeran Hong, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Yonghyeon Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jinyoung Kang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Bumjin Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Joosung Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jooyoung Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hyeongsun Hong, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Kyupil Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Gyoyoung Jin, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9424:
Metrology, Inspection, and Process Control for Microlithography XXIX
Jason P. Cain; Martha I. Sanchez, Editor(s)

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