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Proceedings Paper

Systematic study of ligand structures of metal oxide EUV nanoparticle photoresists
Author(s): Jing Jiang; Mufei Yu; Ben Zhang; Mark Neisser; Jun Sung Chun; Emmanuel P. Giannelis; Christopher K. Ober
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Paper Abstract

Ligand stabilized metal oxide nanoparticle resists are promising candidates for EUV lithography due to their high sensitivity for high-resolution patterning and high etching resistance. As ligand exchange is responsible for the patterning mechanism, we systematically studied the influence of ligand structures of metal oxide EUV nanoparticles on their sensitivity and dissolution behavior. ZrO2 nanoparticles were protected with various aromatic ligands with electron withdrawing and electron donating groups. These nanoparticles have lower sensitivity compared to those with aliphatic ligands suggesting the structures of these ligands is more important than their pka on resist sensitivity. The influence of ligand structure was further studied by comparing the nanoparticles’ solubility for a single type ligand to mixtures of ligands. The mixture of nanoparticles showed improved pattern quality.

Paper Details

Date Published: 27 May 2015
PDF: 6 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942222 (27 May 2015); doi: 10.1117/12.2084896
Show Author Affiliations
Jing Jiang, Cornell Univ. (United States)
Mufei Yu, Cornell Univ. (United States)
Ben Zhang, Cornell Univ. (United States)
Mark Neisser, SEMATECH Inc. (United States)
Jun Sung Chun, SEMATECH Inc. (United States)
SUNY College of Nanoscale Science and Engineering (United States)
Emmanuel P. Giannelis, Cornell Univ. (United States)
Christopher K. Ober, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood; Eric M. Panning, Editor(s)

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