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Proceedings Paper

Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch
Author(s): HsinYu Tsai; Hiroyuki Miyazoe; Joy Cheng; Markus Brink; Simon Dawes; David Klaus; James Bucchignano; Daniel Sanders; Eric Joseph; Matthew Colburn; Michael Guillorn
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Paper Abstract

A viable pattern customization strategy is a critical to continue fin pitch scaling. Analysis shows that a self-aligned customization scheme will be required for fin pitch scaling beyond 20nm. In this paper, we explore scaling of the Tone-Inverted Grapho-Epitaxy technique with 24nm pitch PS-b-PMMA polymer to create groups of fins with self-aligned spaces in between. We discuss material selection, self-aligned customization, and etch processes to form 24-nm-pitch fins on silicon on insulator substrates. We demonstrate two-dimensional pattern customization at 24nm pitch, confirming scalability of this approach. FinFET device integration results at both 28 and 24 nm pitches shows a promising path for continued fin pitch scaling.

Paper Details

Date Published: 19 March 2015
PDF: 7 pages
Proc. SPIE 9423, Alternative Lithographic Technologies VII, 942314 (19 March 2015); doi: 10.1117/12.2084845
Show Author Affiliations
HsinYu Tsai, IBM Thomas J. Watson Research Ctr. (United States)
Hiroyuki Miyazoe, IBM Thomas J. Watson Research Ctr. (United States)
Joy Cheng, IBM Research - Almaden (United States)
Markus Brink, IBM Thomas J. Watson Research Ctr. (United States)
Simon Dawes, IBM Thomas J. Watson Research Ctr. (United States)
David Klaus, IBM Thomas J. Watson Research Ctr. (United States)
James Bucchignano, IBM Thomas J. Watson Research Ctr. (United States)
Daniel Sanders, IBM Research - Almaden (United States)
Eric Joseph, IBM Thomas J. Watson Research Ctr. (United States)
Matthew Colburn, IBM Albany NanoTech (United States)
Michael Guillorn, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 9423:
Alternative Lithographic Technologies VII
Douglas J. Resnick; Christopher Bencher, Editor(s)

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