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Proceedings Paper

Angle dependence of photoreflectance on GaAs multiple quantum wells
Author(s): Gwo-Jen Jan; Kuo-Tung Hsu; Poh-Kun Tseng; Chung-Ping Liu; I-Fan Chang
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Paper Abstract

The excitonic photoreflectance (PR) spectra of GaAs/A1GaAs multiple quantum wells, grown by the molecular beam epitaxial (MBE) technique, were investigated at oblique and near-normal incident angle with different polarized probe lights. The PR spectra have been measured at room temperature using He-Ne laser as a pumping beam in order to study the variations of the spectral line shapes. The experimental results show that the usefulness of the electromodulation to characterize the microstructure of the substrate may be enhanced if we take in account the polarization state of the probe light which is incident at larger oblique angle. The PR spectra were fitted by a third order derivative functional line shape, thus making it possible to determine the energy band gap, broadening parameters, amplitudes, and the phases of the spectral features precisely.

Paper Details

Date Published: 1 August 1990
PDF: 7 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20848
Show Author Affiliations
Gwo-Jen Jan, National Taiwan Univ. (Taiwan)
Kuo-Tung Hsu, National Taiwan Univ. (Taiwan)
Poh-Kun Tseng, National Taiwan Univ. (Taiwan)
Chung-Ping Liu, National Central Univ. (Taiwan)
I-Fan Chang, National Central Univ. (Taiwan)


Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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