Share Email Print

Proceedings Paper

Optoelectronic properties of graphene on silicon substrate: effect of defects in graphene
Author(s): Brahmanandam Javvaji; M. Ajmalghan; D. Roy Mahapatra; M. R. Rahman; G. M. Hegde
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Engineering of electronic energy band structure in graphene based nanostructures has several potential applications. Substrate induced bandgap opening in graphene results several optoelectronic properties due to the inter-band transitions. Various defects like structures, including Stone-Walls and higher-order defects are observed when a graphene sheet is exfoliated from graphite and in many other growth conditions. Existence of defect in graphene based nanostructures may cause changes in optoelectronic properties. Defect engineered graphene on silicon system are considered in this paper to study the tunability of optoelectronic properties. Graphene on silicon atomic system is equilibrated using molecular dynamics simulation scheme. Based on this study, we confirm the existence of a stable super-lattice. Density functional calculations are employed to determine the energy band structure for the super-lattice. Increase in the optical energy bandgap is observed with increasing of order of the complexity in the defect structure. Optical conductivity is computed as a function of incident electromagnetic energy which is also increasing with increase in the defect order. Tunability in optoelectronic properties will be useful in understanding graphene based design of photodetectors, photodiodes and tunnelling transistors.

Paper Details

Date Published: 16 March 2015
PDF: 6 pages
Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93571X (16 March 2015); doi: 10.1117/12.2084796
Show Author Affiliations
Brahmanandam Javvaji, Indian Institute of Science (India)
M. Ajmalghan, Indian Institute of Science (India)
National Institute of Technology, Karnataka (India)
D. Roy Mahapatra, Indian Institute of Science (India)
M. R. Rahman, National Institute of Technology, Karnataka (India)
G. M. Hegde, Indian Institute of Science (India)

Published in SPIE Proceedings Vol. 9357:
Physics and Simulation of Optoelectronic Devices XXIII
Bernd Witzigmann; Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top