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Proceedings Paper

High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes
Author(s): Hieu P. T. Nguyen; Mehrdad Djavid; Steffi Y. Woo; Xianhe Liu; Qi Wang; Gianluigi A. Botton; Zetian Mi
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Paper Abstract

We report on the achievement of relatively high power phosphor-free white light-emitting diodes (LEDs) using a new self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire heterostructure. Multiple AlGaN shell layers are spontaneously formed during the growth of the quantum dot active region. Due to the drastically reduced nonradiative surface recombination, such core-shell nanowire structures exhibit significantly increased carrier lifetime (from ~ 0.3ns to ~ 4.5ns) and massively enhanced photoluminescence intensity. Strong white-light emission was recorded for the unpackaged core-shell nanowire LEDs with an output power of >5 mW, measured under an injection current ~ 60A/cm2, with a color rendering index of ~ 95.

Paper Details

Date Published: 9 March 2015
PDF: 8 pages
Proc. SPIE 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, 938307 (9 March 2015); doi: 10.1117/12.2084777
Show Author Affiliations
Hieu P. T. Nguyen, New Jersey Institute of Technology (United States)
McGill Univ. (Canada)
Mehrdad Djavid, McGill Univ. (Canada)
Steffi Y. Woo, McMaster Univ. (Canada)
Xianhe Liu, McGill Univ. (Canada)
Qi Wang, McGill Univ. (Canada)
Gianluigi A. Botton, McMaster Univ. (Canada)
Zetian Mi, McGill Univ. (Canada)


Published in SPIE Proceedings Vol. 9383:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)

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