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Proceedings Paper

InGaAsSb/AlGaAsSb mid-infrared diode lasers for gas sensing
Author(s): Ramon U. Martinelli; Dmitri Z. Garbuzov; Hao Lee; Pamela K. York; Raymond J. Menna; John C. Connolly; S. Yegna Narayan
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Paper Abstract

Many simple molecules, such as H2O, CO2, CO, N2O, CH4, and HCN, have strong absorption bands at wavelengths between 2 and 3.5 micrometers . We are developing InGaAsSb/AlGaAsSb multi-quantum-well diode lasers operating from 2 to 3.5 micrometers as sources for trace-gas monitors. These devices are grown by molecular beam epitaxy, and they generally comprise four or five InGaAsSb quantum wells separated by AlGaAsSb barriers. The cladding layers are high-Al-content AlGaAsSb layers. Our longest-wavelength, room- temperature (20 degree(s)C) lasers operate at 2.78 micrometers in the pulsed mode, delivering 95 mW peak power. The highest temperature for pulsed-mode operation is 60 degree(s)C, at which the wavelength is 2.9 micrometers . Between 78 and 200 K they operate cw, and at 200 K the output is 3 mW at 2.66 micrometers in a dominant single mode. We discuss the properties of these lasers along with some initial applications to water-vapor detection.

Paper Details

Date Published: 28 April 1995
PDF: 12 pages
Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); doi: 10.1117/12.208459
Show Author Affiliations
Ramon U. Martinelli, David Sarnoff Research Ctr. (United States)
Dmitri Z. Garbuzov, David Sarnoff Research Ctr. (United States)
Hao Lee, David Sarnoff Research Ctr. (United States)
Pamela K. York, David Sarnoff Research Ctr. (United States)
Raymond J. Menna, David Sarnoff Research Ctr. (United States)
John C. Connolly, David Sarnoff Research Ctr. (United States)
S. Yegna Narayan, David Sarnoff Research Ctr. (United States)


Published in SPIE Proceedings Vol. 2382:
Laser Diodes and Applications
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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