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Proceedings Paper

Optical characterization of passivation for high-power AlxGa1-xAs-based lasers
Author(s): Ivoil P. Koutzarov; Harry E. Ruda; Chandima D. Edirisinghe; Lech Z. Jedral; Qiang Liu; Alan H. Moore; Richard Henderson; Marcel G. Boudreau; Mohamed Boumerzoug; Peter Mascher
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Paper Abstract

We report on passivation of AlxGa1-xAs/GaAs surfaces using different sulfur and chlorine based treatments: These include ammonium sulfide solution, arsenic sulfide vapor and hydrochloric acid treatments. Enhancements in the intensity of near band-gap photoluminescence (PL) peaks, coupled with peak half-width reduction on treatment were attributed to a reduction in the density of surface states. Pre-etching using sulfuric acid- and ammonium hydroxide-based solutions prior to sulfur passivation was also found to contribute significantly to the overall success of a passivation treatment. The best sulfur-passivation results for all x (0 < x < 0.38) were found when sulfuric acid-peroxide-deionized water (Caros) solution pre-etching was followed by ammonium sulfide solution treatment at 65 degree(s)C for 25 min.

Paper Details

Date Published: 28 April 1995
PDF: 7 pages
Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); doi: 10.1117/12.208458
Show Author Affiliations
Ivoil P. Koutzarov, Univ. of Toronto (Canada)
Harry E. Ruda, Univ. of Toronto (Canada)
Chandima D. Edirisinghe, Univ. of Toronto (Canada)
Lech Z. Jedral, Univ. of Toronto (Canada)
Qiang Liu, Univ. of Toronto (Canada)
Alan H. Moore, EG&G Canada Ltd. (Canada)
Richard Henderson, EG&G Canada Ltd. (Canada)
Marcel G. Boudreau, McMaster Univ. (Canada)
Mohamed Boumerzoug, McMaster Univ. (Canada)
Peter Mascher, McMaster Univ. (Canada)


Published in SPIE Proceedings Vol. 2382:
Laser Diodes and Applications
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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