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Proceedings Paper

Pulsed anodization technique for fabricating GaSb-based lasers
Author(s): Craig C. Largent; Michael J. Grove; Peter S. Zory; Hong K. Choi; George W. Turner
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Paper Abstract

Recent advances in GaSb-based crystal growth technology have led to the demonstration of high performance quantum well lasers which emit at mid-infrared wavelengths. In fabricating such lasers, techniques are utilized which are processing intensive and time consuming. In this work, we report on the use of a pulsed anodic oxidation (anodization) technique to fabricate low-ridge, wide-stripe GaInAsSb/AlGaAsSb lasers operating near 2 micrometers . The low-ridge stripe areas are defined in one, 5-minute processing step which converts the p+ layer outside the stripe area into a uniform, stable native oxide.

Paper Details

Date Published: 28 April 1995
PDF: 6 pages
Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); doi: 10.1117/12.208453
Show Author Affiliations
Craig C. Largent, Univ. of Florida (United States)
Michael J. Grove, Univ. of Florida (United States)
Peter S. Zory, Univ. of Florida (United States)
Hong K. Choi, MIT Lincoln Lab. (United States)
George W. Turner, MIT Lincoln Lab. (United States)


Published in SPIE Proceedings Vol. 2382:
Laser Diodes and Applications
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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