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Proceedings Paper

Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si
Author(s): P. Biagioni; E. Sakat; L. Baldassarre; Eugenio Calandrini; A. Samarelli; K. Gallacher; Jacopo Frigerio; G. Isella; D. J. Paul; M. Ortolani
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Paper Abstract

We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

Paper Details

Date Published: 16 March 2015
PDF: 6 pages
Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93570G (16 March 2015); doi: 10.1117/12.2084500
Show Author Affiliations
P. Biagioni, Politecnico di Milano (Italy)
E. Sakat, Politecnico di Milano (Italy)
L. Baldassarre, Istituto Italiano di Tecnologia (Italy)
Eugenio Calandrini, Univ. degli Studi di Roma La Sapienza (Italy)
A. Samarelli, Univ. of Glasgow (United Kingdom)
K. Gallacher, Univ. of Glasgow (United Kingdom)
Jacopo Frigerio, Politecnico di Milano (Italy)
G. Isella, Politecnico di Milano (Italy)
D. J. Paul, Univ. of Glasgow (United Kingdom)
M. Ortolani, Univ. degli Studi di Roma La Sapienza (Italy)


Published in SPIE Proceedings Vol. 9357:
Physics and Simulation of Optoelectronic Devices XXIII
Bernd Witzigmann; Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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