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Proceedings Paper

Differential reflectance spectroscopy of semiconductors
Author(s): Michael Gal; Chit Shwe; John Tann; P. McMillan; Mark Gross; R. Shi
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Paper Abstract

Differential reflectance (DR) spectroscopy, applied to semiconductors, is shown to be equivalent in some cases to a contactless electro-reflectance technique. DR spectra are achieved by modifying one half of the sample surface or, in the case of semiconductor alloys, just relying on the inhomogeneities present. Our DR spectra of GaAs reveal sharp critical point structures and are comparable to the known electro-reflectance data. The DR spectra show a marked improvement in signal to noise ratio over photoreflectance spectra of the same samples. This new technique has also been used to characterize 111-V quantum well structures.

Paper Details

Date Published: 1 August 1990
PDF: 10 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20845
Show Author Affiliations
Michael Gal, Univ. of New South Wales (Australia)
Chit Shwe, Univ. of New South Wales (Burma)
John Tann, Univ. of New South Wales (Australia)
P. McMillan, Univ. of New South Wales (Australia)
Mark Gross, Univ. of New South Wales (Australia)
R. Shi, Univ. of New South Wales (Australia)

Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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