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Proceedings Paper

Frequency domain measurements for laser diagnostics of microwave transistors
Author(s): Garif G. Akchurin; Andrew Yu. Ognishchev
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Paper Abstract

GaAs MESFET dynamic photoresponse under optical illumination by AM light of a laser diode has been investigated both theoretically and experimentally. The possibility of MESFET gain coefficient measurement via laser probing is shown in the frequency range from 100 MHz to 8 GHz.

Paper Details

Date Published: 28 April 1995
PDF: 5 pages
Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); doi: 10.1117/12.208449
Show Author Affiliations
Garif G. Akchurin, Saratov State Univ. (Russia)
Andrew Yu. Ognishchev, Saratov State Univ. (Russia)


Published in SPIE Proceedings Vol. 2382:
Laser Diodes and Applications
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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