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Proceedings Paper

Single-mode high-power lasers emitting at 980 nm
Author(s): Niloy K. Dutta; William S. Hobson; John Lopata; E. Fred Schubert; M. Passlack
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Paper Abstract

The fabrication and performance characteristics of InGaAs/GaAsInGaP strained quantum well lasers are described. Lasers with low threshold current, high output power and excellent reliability have been fabricated. In0.2Ga0.8As/GaAs lasers emitting near 1 micrometers are useful as pump sources for erbium doped optical fiber amplifiers.

Paper Details

Date Published: 28 April 1995
PDF: 5 pages
Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); doi: 10.1117/12.208442
Show Author Affiliations
Niloy K. Dutta, AT&T Bell Labs. (United States)
William S. Hobson, AT&T Bell Labs. (United States)
John Lopata, AT&T Bell Labs. (United States)
E. Fred Schubert, AT&T Bell Labs. (United States)
M. Passlack, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2382:
Laser Diodes and Applications
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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