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Proceedings Paper

Photoreflectance at elevated temperatures
Author(s): Hongen Shen
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Paper Abstract

Using the contactiess modulation spectroscopy technique of photoreflectance, the temperature variations of the direct gap E0 of GaAs, InP, GaA1As, InGaAs have been measured at elevated temperatures up to 600°C. The parameters which describe the temperature dependence of the band gap energies have been evaluated. The ability to measure the band gap at elevated temperatures opens up many new possibilities for in-situ monitoring of MBE and MOCVD processes. In this paper, we review some of the recent developments in the use of photoreflectance at elevated temperatures.

Paper Details

Date Published: 1 August 1990
PDF: 11 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20844
Show Author Affiliations
Hongen Shen, GEO-CENTERS, Inc. (United States)

Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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