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Proceedings Paper

High-coupled-power 0.98-μm narrow-beam laser diodes
Author(s): Etsuji Omura; Akihiro Shima; Akira Takemoto; Yasuhiro Kunitsugu; Motoharu Miyashita; S. Karakida; T. Kamizato; Akihiro Adachi; Yasuaki Yoshida; Mutuyuki Otsubo
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Paper Abstract

Kink-free, high coupled power of 148 mW into a single mode fiber has been realized by narrowing the vertical beam divergence in 0.98 micrometers laser diodes. It has been found that the high-refractive index GaAs layers have crucial influence on the far field patterns as well as lasing spectrum, since the GaAs is transparent to the emission wavelength of 0.98 micrometers .

Paper Details

Date Published: 28 April 1995
PDF: 8 pages
Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); doi: 10.1117/12.208439
Show Author Affiliations
Etsuji Omura, Mitsubishi Electric Corp. (Japan)
Akihiro Shima, Mitsubishi Electric Corp. (Japan)
Akira Takemoto, Mitsubishi Electric Corp. (Japan)
Yasuhiro Kunitsugu, Mitsubishi Electric Corp. (Japan)
Motoharu Miyashita, Mitsubishi Electric Corp. (Japan)
S. Karakida, Mitsubishi Electric Corp. (Japan)
T. Kamizato, Mitsubishi Electric Corp. (Japan)
Akihiro Adachi, Mitsubishi Electric Corp. (Japan)
Yasuaki Yoshida, Mitsubishi Electric Corp. (Japan)
Mutuyuki Otsubo, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 2382:
Laser Diodes and Applications
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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