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Proceedings Paper

New diode wavelengths for pumping solid state lasers
Author(s): Jay A. Skidmore; Mark A. Emanuel; Raymond J. Beach; Barry L. Freitas; Nils W. Carlson; Christopher D. Marshall; William J. Benett; Richard W. Solarz; David P. Bour; David W. Treat
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Paper Abstract

High-power laser-diode arrays have been demonstrated to be viable pump sources for solid- state lasers. The diode bars (fill factor of 0.7) were bonded to silicon microchannel heatsinks for high-average-power operation. Over 12 W of cw output power was achieved from a one cm AlGaInP tensile-strained single-quantum-well laser diode bar. At 690 nm, a compressively strained single-quantum-well laser-diode array produced 360 W/cm2 per emitting aperture under cw operation, and 2.85 kW of pulsed power from a 3.8 cm2 emitting- aperture array. InGaAs strained single-quantum-well laser diodes emitting at 900 nm produced 2.8 kW pulsed power from a 4.4 cm2 emitting-aperture array.

Paper Details

Date Published: 28 April 1995
PDF: 11 pages
Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); doi: 10.1117/12.208438
Show Author Affiliations
Jay A. Skidmore, Lawrence Livermore National Lab. (United States)
Mark A. Emanuel, Lawrence Livermore National Lab. (United States)
Raymond J. Beach, Lawrence Livermore National Lab. (United States)
Barry L. Freitas, Lawrence Livermore National Lab. (United States)
Nils W. Carlson, Lawrence Livermore National Lab. (United States)
Christopher D. Marshall, Lawrence Livermore National Lab. (United States)
William J. Benett, Lawrence Livermore National Lab. (United States)
Richard W. Solarz, Lawrence Livermore National Lab. (United States)
David P. Bour, Xerox Palo Alto Research Ctr. (United States)
David W. Treat, Xerox Palo Alto Research Ctr. (United States)


Published in SPIE Proceedings Vol. 2382:
Laser Diodes and Applications
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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