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Proceedings Paper

Photoreflectance characterization of built-in potential in MBE-produced As-grown GaAs surface
Author(s): Takashi Kanata-Kito; Masayuki Matsunaga; Hideyuki Takakura; Yoshihiro Hamakawa; Taneo Nishino
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Paper Abstract

Photoreflectance (PR) spectroscopy has been used to study the built-in surface potential in GaAs epitaxial film grown by molecular beam epitaxy (MBE). The PR signal amplitude ILIR/RI sensitively depends on modulation light power, built-in surface potential and temperature. From the analysis of the modulation light power dependence of IzlR/RI, the built-in surface potential of 0.47±0.09eV was determined for a MBE-grown GaAs(lOO) epitaxial film, and the increase of the surface potential by gold deposition was observed.

Paper Details

Date Published: 1 August 1990
PDF: 10 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20837
Show Author Affiliations
Takashi Kanata-Kito, Osaka Univ. (Japan)
Masayuki Matsunaga, Osaka Univ. (Japan)
Hideyuki Takakura, Osaka Univ. (Japan)
Yoshihiro Hamakawa, Osaka Univ. (Japan)
Taneo Nishino, Kobe Univ. (Japan)

Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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