Share Email Print
cover

Proceedings Paper

Photoreflectance characterization of built-in potential in MBE-produced As-grown GaAs surface
Author(s): Takashi Kanata-Kito; Masayuki Matsunaga; Hideyuki Takakura; Yoshihiro Hamakawa; Taneo Nishino
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Photoreflectance (PR) spectroscopy has been used to study the built-in surface potential in GaAs epitaxial film grown by molecular beam epitaxy (MBE). The PR signal amplitude ILIR/RI sensitively depends on modulation light power, built-in surface potential and temperature. From the analysis of the modulation light power dependence of IzlR/RI, the built-in surface potential of 0.47±0.09eV was determined for a MBE-grown GaAs(lOO) epitaxial film, and the increase of the surface potential by gold deposition was observed.

Paper Details

Date Published: 1 August 1990
PDF: 10 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20837
Show Author Affiliations
Takashi Kanata-Kito, Osaka Univ. (Japan)
Masayuki Matsunaga, Osaka Univ. (Japan)
Hideyuki Takakura, Osaka Univ. (Japan)
Yoshihiro Hamakawa, Osaka Univ. (Japan)
Taneo Nishino, Kobe Univ. (Japan)


Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

© SPIE. Terms of Use
Back to Top