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Proceedings Paper

Photoreflectance and photoluminescence study of defect passivation by hydrogen in GaAlAs/GaAs/GaAs heterostructures
Author(s): Mario Capizzi; Carlo Coluzza; P. Frankl; Andrea Frova; X. Yin; Fred H. Pollak; Robert N. Sacks
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Paper Abstract

Using both photoreflectance (PR) at 80 and 300 K and photoluminescence (PL) at 77 K, we have investigated the passivation by H-gun treatment of the surface, interface and volume defects in Ga83Al017As/GaAs/GaAs MBE-grown heterostructure on LEC substrate. Both amplitude of PR and phase delay angle between laser excitation and response were measured. After H-treatment, substantial changes were observed in all properties. Room temperature PR is indicative of the ready disappearance of surface and interface defects at early stages of hydrogenation. Deep trap passivation in the bulk gives rise to increased PL emission in both GaA1As and GaAs, the effect being large only for the latter. A concomitant low in the phase delay angle is detected. The optimum occurs when the total dose of H ions reaching the surface is 1017 cm2. When the largest doses of H are attained, a high density of new bulk defects develops in GaAs, which virtually wipe-out luminescence and reinstate a large phase delay.

Paper Details

Date Published: 1 August 1990
PDF: 6 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20836
Show Author Affiliations
Mario Capizzi, Univ. "La Sapienza" (Italy)
Carlo Coluzza, Univ. "La Sapienza" (Italy)
P. Frankl, Univ. "La Sapienza" (Italy)
Andrea Frova, Univ. "La Sapienza" (Italy)
X. Yin, Brooklyn College/CUNY (United States)
Fred H. Pollak, Brooklyn College/CUNY (United States)
Robert N. Sacks, United Technologies Research Ctr. (United States)

Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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