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Proceedings Paper

Detection of microwave radiation on porous silicon nanostructures
Author(s): J. Gradauskas; J. Stupakova; A. Sužiedėlis; N. Samuoliene
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Paper Abstract

We report on possibility to detect pulsed microwave radiation across the metal/oxide/porous silicon structures and analyse possible physical reasons causing the rise of the emf voltage signal. The n-type porous layers were fabricated according to conventional electrochemical etching procedure, and were exposed to pulsed 10 GHz microwave radiation. The results of investigation show that the porous Si samples have higher by at least one order voltage-to-power sensitivity than the samples without the porous layer, and are considered to have high potential to increase it further. Free carrier heating phenomenon is considered to be responsible for the signal formation.

Paper Details

Date Published: 22 October 2014
PDF: 4 pages
Proc. SPIE 9421, Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8), 942103 (22 October 2014); doi: 10.1117/12.2083575
Show Author Affiliations
J. Gradauskas, Ctr. for Physical Sciences and Technology (Lithuania)
Vilnius Gediminas Technical Univ. (Lithuania)
J. Stupakova, Vilnius Gediminas Technical Univ. (Lithuania)
A. Sužiedėlis, Ctr. for Physical Sciences and Technology (Lithuania)
Vilnius Gediminas Technical Univ. (Lithuania)
N. Samuoliene, Vilnius Gediminas Technical Univ. (Lithuania)


Published in SPIE Proceedings Vol. 9421:
Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8)
Janis Spigulis, Editor(s)

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