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Proceedings Paper

High-power ultrafast and broadly-tunable quantum-dot lasers
Author(s): M. A. Cataluna; Y. Ding; Stephanie E. Haggett; David Bajek; M. Krakowski
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Paper Abstract

We present our recent progress in the development of novel lasers with tapered InAs/GaAs quantum-dot devices at their core, unlocking the access to record-high output power from tunable and ultrafast laser diodes, in the spectral region between 1.2 - 1.3 μm.

Paper Details

Date Published: 8 February 2015
PDF: 6 pages
Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 93702D (8 February 2015); doi: 10.1117/12.2083496
Show Author Affiliations
M. A. Cataluna, Univ. of Dundee (United Kingdom)
Y. Ding, Univ. of Dundee (United Kingdom)
Stephanie E. Haggett, Univ. of Dundee (United Kingdom)
David Bajek, Univ. of Dundee (United Kingdom)
M. Krakowski, Alcatel Thales III-V Lab. (France)


Published in SPIE Proceedings Vol. 9370:
Quantum Sensing and Nanophotonic Devices XII
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)

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