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Proceedings Paper

The study of optical properties of InGaN-based solar cell with blue emission wavelength
Author(s): Jiangteng Wang; Wen Ding; Feng Yun; Qiang Li; Shuai Wang; Deyang Xia; Ye Zhang; Maofeng Guo; Shuo Liu; Xun Hou
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Paper Abstract

The III-N material system (including alloys of InN, AlN, and GaN) has several characteristics which give it key advantages over the existing solar cell materials, for example, the high absorption coefficient and high carrier mobility, more important, the wide range of band gap energies which spans nearly the entire solar spectrum. In this paper, we fabricated a multiple quantum well (MQW) InGaN/GaN solar cell. The photovoltaic characteristics of the device was demonstrated that, the short circuit current density (JSC) is about 0.43mA/cm2 , the open circuit voltage is about 2.2 eV, and the fill factor is about 81%. But the peak external quantum efficiency (EQE) is not very high, only 30%. And the conversion efficiency is about 0.83%, so more work for device design should be done in the future.

Paper Details

Date Published: 19 February 2015
PDF: 4 pages
Proc. SPIE 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014), 94492M (19 February 2015); doi: 10.1117/12.2083303
Show Author Affiliations
Jiangteng Wang, Xi'an Jiaotong Univ. (China)
Wen Ding, Xi'an Jiaotong Univ. (China)
Feng Yun, Xi'an Jiaotong Univ. (China)
Qiang Li, Xi'an Jiaotong Univ. (China)
Shuai Wang, Xi'an Jiaotong Univ. (China)
Deyang Xia, Xi'an Jiaotong Univ. (China)
Ye Zhang, Xi'an Jiaotong Univ. (China)
Maofeng Guo, Xi'an Jiaotong Univ. (China)
Shuo Liu, Shaanxi Supernova Lighting Technology Co., Ltd. (China)
Xun Hou, Xi'an Jiaotong Univ. (China)


Published in SPIE Proceedings Vol. 9449:
The International Conference on Photonics and Optical Engineering (icPOE 2014)
Ailing Tian; Anand Asundi; Weiguo Liu; Chunmin Zhang, Editor(s)

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