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Proceedings Paper

Barium diffusion in metallo-organic solution deposited barrier layers and Y1Ba2Cu3O7-x films
Author(s): Russell A. Lipeles; David A. Thiede; Martin S. Leung
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Paper Abstract

Barium silicate and barium aluminate films were studied for use as chemical reaction and diffusion barrier layers for Y1Ba2Cu3O7 (YBC) deposited on sapphire and fused silica substrates by the sol-gel technique. Depth profiling by secondary ion mass spectrometry (SIMS) was used to characterize the abruptness of the interfaces between the barrier layer and the YBC film as well as the barrier layer and the substrate. We found that barium aluminate films reacted with fused silica substrates forming a coarse-grained barium silicate phase. Barium silicate, BaSiO3, also reacted with silica substrates forming a broad, amorphous reaction zone containing some BaSi2O5. Although barium silicate and barium aluminate deposited on sapphire formed a BaA112O19 phase, they provided a barrier to barium diffusion from sol-gel deposited YBC. Crystalline barium aluminate grown on c-cut sapphire was the most effective barrier layer for the growth of YBC films; compositionally uniform YBC films were made similar to that grown on strontium titanate substrates. These data show that chemically stable, crystalline films are more effective barrier layers than amorphous films.

Paper Details

Date Published: 1 October 1990
PDF: 8 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20832
Show Author Affiliations
Russell A. Lipeles, The Aerospace Corp. (United States)
David A. Thiede, The Aerospace Corp. (United States)
Martin S. Leung, The Aerospace Corp. (United States)

Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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