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Proceedings Paper

Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers
Author(s): Pier J. A. Sazio; Justin R. Sparks; Rongrui He; Mahesh Krishnamurthi; Thomas C. Fitzgibbons; Subhasis Chaudhuri; Neil F. Baril; Anna C. Peacock; Noel Healy; Venkatraman Gopalan; John V. Badding
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Paper Abstract

ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 - 5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode corecladding waveguiding.

Paper Details

Date Published: 20 February 2015
PDF: 8 pages
Proc. SPIE 9342, Solid State Lasers XXIV: Technology and Devices, 93420A (20 February 2015); doi: 10.1117/12.2083045
Show Author Affiliations
Pier J. A. Sazio, Univ. of Southampton (United Kingdom)
Justin R. Sparks, The Pennsylvania State Univ. (United States)
Rongrui He, The Pennsylvania State Univ. (United States)
Mahesh Krishnamurthi, The Pennsylvania State Univ. (United States)
Thomas C. Fitzgibbons, The Pennsylvania State Univ. (United States)
Subhasis Chaudhuri, The Pennsylvania State Univ. (United States)
Neil F. Baril, The Pennsylvania State Univ. (United States)
Anna C. Peacock, Univ. of Southampton (United Kingdom)
Noel Healy, Univ. of Southampton (United Kingdom)
Venkatraman Gopalan, The Pennsylvania State Univ. (United States)
John V. Badding, The Pennsylvania State Univ. (United States)


Published in SPIE Proceedings Vol. 9342:
Solid State Lasers XXIV: Technology and Devices
W. Andrew Clarkson; Ramesh K. Shori, Editor(s)

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