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Proceedings Paper

Growth of ZnTe and ZnSexTe1-x epilayers and superlattices on GaSb
Author(s): Mark C. Phillips; Yasantha Rajakarunanayake; James O. McCaldin; David H. Chow; D. A. Collins; Thomas C. McGill
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Paper Abstract

We present photoluminescence (PL) from Te-rich ZnSeTei_ alloys and ZnSeTei_/ZnTe superlattices and discuss the growth of these materials on GaSb epilayers on GaSb substrates. We show that growing ZnTe on GaSb substrates eliminates several bound exciton peaks which occur in ZnTe grown on GaAs. The ZnSeTei_ epilayers show bright luminescence from centers over 100 meV below the expected band edge. PL from ZnSeTe1_ alloys and superlattices is qualitatively very different from PL from CdZni.Te alloys and CdZniTe/ZnTe superlattices .

Paper Details

Date Published: 1 October 1990
PDF: 7 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20830
Show Author Affiliations
Mark C. Phillips, California Institute of Technology (United States)
Yasantha Rajakarunanayake, California Institute of Technology (United States)
James O. McCaldin, California Institute of Technology (United States)
David H. Chow, California Institute of Technology (United States)
D. A. Collins, California Institute of Technology (United States)
Thomas C. McGill, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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