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Proceedings Paper

Physics and technology of antimonide heterostructure devices at SCD
Author(s): Philip Klipstein
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Paper Abstract

SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures, grown on GaSb. The XBn/XBp family of detectors enables diffusion limited behavior with dark currents comparable with MCT Rule-07 and with high quantum efficiencies. InAsSb/AlSbAs based XBn focal plane array detectors with a cut-off wavelength of ~ 4.1 μm and formats presently up to 1024×1280 / 15 μm, operate with background limited performance up to ~175 K at F/3. They have a sensitivity and image quality comparable with those of standard InSb detectors working at 77K. In an XBp configuration, the same concept has been applied to an InAs/GaSb type II superlattice (T2SL) detector with a cut-off wavelength of ~ 9.5 μm, which operates with background limited performance up to ~100 K at F/2. In order to design our detectors effectively, a suite of simulation algorithms was developed based on the k ⋅ p and optical transfer matrix methods. In a given T2SL detector, the complete spectral response curve can be predicted essentially from a knowledge of the InAs and GaSb layer widths in a single period of the superlattice. Gallium free T2SL detectors in which the GaSb layer is replaced with InAs1-xSbx (x ~ 0.15-0.5) have also been simulated and the predicted spectral response compared for the two detector types.

Paper Details

Date Published: 8 February 2015
PDF: 8 pages
Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 937020 (8 February 2015); doi: 10.1117/12.2082938
Show Author Affiliations
Philip Klipstein, SCD SemiConductor Devices (Israel)


Published in SPIE Proceedings Vol. 9370:
Quantum Sensing and Nanophotonic Devices XII
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)

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