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Proceedings Paper

Study of high aspect ratio silicon etching based on ICP
Author(s): Jiang Hu; Shun Zhou; Shuai Hu; Yufeng Zhu; Weiguo Liu
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Paper Abstract

The etching process of the high aspect ratio of Si deep trench is the key technology in MEMS field. Having used Oxford Plasmalabsystem100 ICP-180 etcher with SF6 and C4F8 as the etching gas, the influence on the deep Si etching process of Bosch under different ICP power, bias voltage, temperature, pressure and other parameters has been studied. The experimental result shows that under appropriate parameters, the high-aspect ratio of silicon deep trench is greater than 26:1, the sidewalls’ vertical degree is 89.9°, and the etching rate is greater than 2μm/min; the high aspect ratio of SOI deep trench is greater than 28:1, the sidewalls’ vertical degree is 89.7°, and the etching rate is greater than 2μm/min.

Paper Details

Date Published: 19 February 2015
PDF: 6 pages
Proc. SPIE 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014), 94493P (19 February 2015); doi: 10.1117/12.2082855
Show Author Affiliations
Jiang Hu, Xi'an Technological Univ. (China)
Shun Zhou, Xi'an Technological Univ. (China)
Science and Technology on Low-Light-Level Night Vision Lab. (China)
Shuai Hu, Xi'an Technological Univ. (China)
Yufeng Zhu, Xi'an Technological Univ. (China)
Science and Technology on Low-Light-Level Night Vision Lab. (China)
Weiguo Liu, Xi'an Technological Univ. (China)


Published in SPIE Proceedings Vol. 9449:
The International Conference on Photonics and Optical Engineering (icPOE 2014)
Ailing Tian; Anand Asundi; Weiguo Liu; Chunmin Zhang, Editor(s)

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