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Proceedings Paper

Plasma luminescence spectroscopy for sputtering growth of high Tc superconductors
Author(s): Sang Seop Yom; Yohee Kim; Sang Sam Choi
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Paper Abstract

We present in situ. real-time monitoring of emission lines from rf induced plasma of elemental and ionized species from target of YBaCuO7_ compounds during the sputtering growth. Abundances of the ionized and/or neutral species rather than clusters were observed while relative composition of the species was varied by target composition, applied rf power, gas pressure, and location of substrate. We discuss usefulness of real time monitoring of ejected species which depend on rf power and gas pressure during the sputtering deposition of high Tc superconducting thin films.

Paper Details

Date Published: 1 October 1990
PDF: 8 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20828
Show Author Affiliations
Sang Seop Yom, Korea Institute of Science and Technology (South Korea)
Yohee Kim, Korea Institute of Science and (South Korea)
Sang Sam Choi, Korea Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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